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SSM452_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSM452
-6 A, -30V, RDS(ON) 55mâ¦
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
The SSM452 provide the designer with the best combination of
fast switching, low on-resistance and cost-effectiveness.
FEATURES
ï¬ Simple Drive Requirement
ï¬ Lower On-resistance
ï¬ Fast Switching
MARKING
ïªï
Gate
ï«ï
Drain
ï¬ï
Source
SOT-223
A
M
4
Top View C B
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Drain â Source Voltage
VDS
Gate â Source Voltage
VGS
Continuous Drain Current 3
TA = 25°C
TA = 70°C
ID
Pulsed Drain Current 1
IDM
Total Power Dissipation
PD
Linear Derating Factor
-30
±20
-6.0
-4.8
-20
2.7
0.02
Operating Junction & Storage Temperature
Range
Maximum JunctionâAmbient 3
TJ, TSTG
-55 ~ 150
THERMAL DATA
RθJA
45
UNIT
V
V
A
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
24-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
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