SSM3055 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSM3055
4A, 30V,RDS(ON) 80m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-223
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Description
The SSM3055 Provide the designer with the best Combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 Package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage application such as DC/DC conerters.


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Features
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching
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Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current ¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25к
ID@TA=75к
IDM
PD@TA=25к
Tj, Tstg
Ratings
30
±20
4
3.2
20
2.7
0.02
-55~+150
Unit
V
V
A
A
A
W
W /eC
eC
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Rthj-a
Ratings
45
Unit
eC/W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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