SSM2625_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSM2625
0.9A , 250V , R_DS(ON) 1.7 
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM2625 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-223 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
 Lower Gate Charge
 Simple Drive Requirement
 Fast Switching Characteristic
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
MARKING
2625

 = Date code
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
D

Millimeter
Min. Max.
-
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20

G

S
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹@V_GS=10V ^TA=25°C
T_A=70°C
Pulsed Drain Current ²
Power Dissipation ³
T_A=25°C
Operating Junction & Storage Temperature
V_DS
V_GS
I_D
I_DM
P_D
T_J, T_STG
250
±20
0.9
0.7
3.6
2.2
-65~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient¹(Max).
R_θJA
57
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
22-Apr-2014 Rev.B
Any changes of specification will not be informed individually.
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