SSM2305A Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
Description
The SSM2305A provide the designer with best
combination of fast switching, low on-resistance
and cost-effectiveness.
The SSM2305A is universally preferred for all
commercial-industrial surface mount applications
and suited for low voltage applications such as
DC/DC converters.
SSM2305A
-3.2A, -30V,RDS(ON) 80m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-223
Features
* Simple Drive Requirement
* Small Package Outline
D
2 3 0 5A
G
GD
S
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0°
10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Symbol
VDS
VGS
ID@TA=25^oC
ID@TA=70 ^oC
IDM
PD@TA=25^oC
Tj, Tstg
Ratings
-30
±12
-3..2
-2..6
-10
2.7
0.02
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Ratings
45
Unit
o_C/W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4