SSM1N25E Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SSM1N25E
1A, 250V, R_DS(ON) 1.78Ω
N-Channel Enhancement Mode MOSFET
FEATURES
Low Gate Charge
Simple Drive Requirement
Green Device Available
ESD susceptibility 2KV
MARKING
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@ VGS=10V ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Total Power Dissipation ³
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient ^{1 t≦10sec}
RθJA
Steady State
Rating
250
±20
1
0.8
4
2.8
-55~150
45
62.5
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
07-Aug-2015 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4