SSM0420S Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSM0420S
2.05A, 200V, R_{DS(O )} 360mΩ
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSM0420S is the highest performance trench N-ch
MOSFETs with extreme high cell density, which provides
excellent R_DS(ON) and gate charge for most synchronous
buck converter applications.
FEATURES
Advanced high cell density Trench technology
Super low gate charge
Green device available
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
Drain
Gate
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@ VGS=10V ¹
TA=25°C
TA=70°C
Pulsed Drain Current ²
Total Power Dissipation@ TA=25°C ¹
Maximum Thermal Resistance from Junction to Ambient ¹
Maximum Thermal Resistance from Junction to Ambient
Maximum Thermal Resistance from Junction to Case ¹
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RθJA
RθJC
TJ, TSTG
Source
Rating
200
±20
2.05
1.34
5.5
1.5
85
120
36
-65~150
Unit
V
V
A
A
A
W
°C / W
°C / W
°C
http://www.SeCoSGmbH.com/
02-Sep-2016 Rev. A
Any changes of specification will not be informed individually.
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