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| SSM0410S_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSM0410S
3A , 100V , RDS(ON) 310 mï
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
The SSM0410S provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-223 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
ï¬ Lower Gate Charge
ï¬ Simple Drive Requirement
ï¬ Fast Switching Characteristic
MARKING
0410S
ï°ï°ï°ï°
ï° = Date code
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
SOT-223
A
M
4
Top View C B
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
D
ï«ïï
ïªï
G
ï¬ï
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1@VGS=10V TA=25°C
TA=70°C
Pulsed Drain Current 2
Power Dissipation 3
TA=25°C
Operating Junction & Storage Temperature
VDS
VGS
ID
IDM
PD
TJ, TSTG
100
±20
3
1.7
5.5
1.5
-65~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
RθJA
85
Thermal Resistance Junction-Case1(Max).
RθJC
36
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
27-Jun-2013 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 4
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