SSM0410 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSM0410
3.5 A, 100V, R_DS(ON) 220mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM0410 provide the designer with best combination of fast switching,
ruggedized device design, low on resistance and cost-effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
 Fast Switching
 Low On-resistance
 Logic Level Compatible
MARKING
Drain
Gate
Source
SOT-223
A
M
4
Top View C B
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain – Source Voltage
V_DS
Gate – Source Voltage
V_GS
Continuous Drain Current ³, V_GS@5V
T_A = 25°C
T_A = 70°C
I_D
Pulsed Drain Current ^1,2
I_DM
Total Power Dissipation
P_D
Linear Derating Factor
Operating Junction & Storage Temperature Range
Maximum Junction–Ambient ³
T_J, T_STG
THERMAL DATA
R_θJA
RATING
100
±20
3.5
2.2
14
2.7
0.02
-65~150
45
UNIT
V
V
A
A
A
W
W/°C
°C
°C/W
http://www.SeCoSGmbH.com/
11-May-2010 Rev. A
Any changes of specification will not be informed individually.
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