SSM01N60SL Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSM01N60SL
1A , 600V , R_DS(ON) 8.1Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSM01N60SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R_DS(on) and gate charge for most of the synchronous
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
1
Gate
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
2
Drain
3
Source
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
TC=25°C
1
Continuous Drain Current
ID
TC=100°C
0.6
Pulsed Drain Current
IDM
4
Total Power Dissipation
TC=25°C
PD
Derate above 25°C
Single Pulse Avalanche Energy ¹
EAS
22
0.18
52
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
RθJA
60
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,IAS=1.74A, VDD=110V, RG=25Ω, Starting TJ =25°C
RθJC
5.68
Unit
V
V
A
A
A
W
W/°C
mJ
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
01-Apr-2014 Rev. A
Any changes of specification will not be informed individually.
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