SSL6679 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSL6679
-75A, -30V,RDS(ON) 9m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSL6679 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-263 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters and high efficiency switching
circuit.
Features
* Lower On-Resistance
* Simple Drive Requirement
* Fast Switching Characteristics
D
G
S
REF.
A
b
L4
c
L3
L1
E
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.00 0.30
0.36 0.5
1.50 REF.
2.29 2.79
9.80 10.4
REF.
c2
b2
D
e
L
θ
L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
8.6 9.0
2.54 REF.
14.6 15.8
0^o
8^o
1.27 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25^oC
ID@TA=100^oC
IDM
PD@TA=25^oC
Tj, Tstg
Ratings
-30
±25
-75
-50
-300
89
0.71
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Ratings
1.4
62
Unit
o_{C /W}
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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