SSK3018K_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel MOSFET

Elektronische Bauelemente
SSK3018K
100mA, 30V
N-Channel MOSFET
DESCRIPTION
 Low on-resistance
 Fast switching speed
 Easily designed drive circuits
 Easy to parallel
FEATURES
 Simple drive requirement
 Small package outline
MARKING
KN
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
3 DRAIN
1
GATE
*Gate
Protection
Diode
2 SOURCE
SOT-323
A
L
3
Top View
CB
1
2
K
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Power Dissipation ¹
Maximum Junction to Ambient
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D
P_D
R_θJA
T_J, T_STG
Ratings
30
±20
100
200
625
150, -55~150
Unit
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Off Characteristics
Drain-Source Breakdown Voltage
V_(BR)DSS
30
-
-
V
Gate-Threshold Voltage
Gate-Source Leakage Current
V_GS(TH)
0.8
I_GSS
-
-
1.5
V
-
±500
nA
Drain-Source Leakage Current
I_DSS
-
-
0.2
μA
Static Drain-Source On-Resistance R_DS(ON)
-
-
-
-
8
13
Ω
Forward Transconductance
g_FS
20
-
-
ms
Dynamic Characteristics¹
Input Capacitance
Output Capacitance
C_ISS
C_OSS
-
13
-
-
9
-
pF
Reverse Transfer Capacitance
C_RSS
-
4
-
Switching Characteristics¹
Turn-on Delay Time
Rise Time
Turn-off Delay Time
T_d(ON)
-
15
-
T_R
T_d(OFF)
-
-
35
80
-
-
nS
Fall Time
T_R
Note:
1. These parameters have no way to verify.
-
80
-
Test Conditions
V_GS=0, I_D =10μA
V_DS=3V_, I_D =100μA
V_GS=±20V, V_DS=0
V_DS=30V, V_GS=0
V_GS=4V, I_D=10mA
V_GS=2.5V, I_D=1mA
V_DS=3V, I_D=10mA
V_DS=5V
V_GS=0
f=1MHz
V_GS=5V, V_DD=5V
I_D=10mA
R_L=500Ω
R_G=10Ω
http://www.SeCoSGmbH.com/
25-Apr-2013 Rev. B
Any changes of specification will not be informed individually.
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