SSK3018K Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel MOSFET

Elektronische Bauelemente
SSK3018K
100mA, 30V
N-Channel MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Low on-resistance
Fast switching speed
Low voltage drive (2.5V) makes this device ideal for portable equipment
Easily designed drive circuits
Easy to parallel
3 DRAIN
FEATURES
Simple drive requirement
Small package outline
DEVICE MARKING: KN
1
GATE
*Gate
Protection
Diode
2 SOURCE
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current (tp≦10µS)
Power Dissipation *
Operating Junction & Storage Temperature Range
Note: With each pin mounted on the recommended lands.
VDS
VGS
ID
IDM
PD
TJ, TSTG
RATING
30
±20
100
400
200
150, -55~150
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
UNIT
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
STATIC CARACTERISTICS
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
Static Drain-Source On-Resistance
V(BR)DSS
30
-
-
V
VGS(TH)
0.8
-
1.5
V
IGSS
-
-
±1.0
µA
IDSS
-
-
1.0
µA
-
5.0
8.0
RDS(ON)
-
7.0
13
Ω
Forward Transconductance
gFS
20
-
-
ms
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
-
13
-
-
9
-
pF
-
4
-
SWITCHING CHARACTERISTICS
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(ON)
-
15
-
TR
-
35
-
nS
Td(OFF)
-
80
-
TR
-
80
-
TEST CONDITION
VGS=0V, ID =10µA
VDS= 3V, ID =100µA
VGS=±20V
VDS=30V, VGS=0V
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
VDS=3V, ID=10mA
VDS=5V
VGS=0V
f=1MHz
VGS=5V
I D=10mA
RL=500Ω
RG=10Ω
10-Jan-2010 Rev. A
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