SSI3439J Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSI3439J
-Ch: 0.75A, 20V, R_{DS(O )} 380 mΩ
P-Ch: -0.66A, -20V, R_{DS(O )} 520 mΩ
& P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSI3439J is N and P Channel enhancement MOS Field
Effect Transistor. It uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge.
This device is suitable for the use in DC-DC conversion, load
switch and level shift.
B
SOT-563
A
FEATURES
Surface mount package
Low R_DS(ON)
ESD-protecting gate
APPLICATIONS
Load/power switching
Interfacing switching
Battery management for Ultra small portable electronics
J
D
C
F
G
H
E
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.50 1.70
1.50 1.70
0.525 0.60
1.10 1.30
-
0.05
REF.
F
G
H
J
Millimeter
Min. Max.
0.09 0.16
0.45 0.55
0.17 0.27
0.10 0.30
MARKING
49K
PACKAGE INFORMATION
Package
MPQ
SOT-563
3K
Leader Size
7 inch
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current@ tp=10µs
Thermal Resistance from Junction to Ambient ¹
Lead Temperature for Soldering Purposes
@1/8’’ from case for 10s
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
RθJA
TL
TJ, TSTG
Part Number
N-Channel
P-Channel
20
-20
±12
0.75
-0.66
1.8
-1.2
833
260
150, -55~150
Unit
V
V
A
A
°C/ W
°C
°C
http://www.SeCoSGmbH.com/
06-Apr-2017 Rev. A
Any changes of specification will not be informed individually.
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