SSI3139J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Dual P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSI3139J
-0.66A, -20V, R_DS(ON) 520 mΩ
Dual P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSI3139J is a Dual P Channel MOS which has been
designed to be used as a Power Trench process to
optimize R_DS(ON).
B
FEATURES
High side switching
Low on-resistance
Low threshold
Fast switching speed
C
SOT-563
A
J
D
F
G
H
E
APPLICATIONS
Load/power switching
Power supply converter circuits
Battery-operated system
MARKING
39K
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.50 1.70
1.50 1.70
0.525 0.60
1.10 1.30
-
0.05
REF.
F
G
H
J
Millimeter
Min. Max.
0.09 0.16
0.45 0.55
0.17 0.27
0.10 0.30
PACKAGE INFORMATION
Package
MPQ
SOT-563
3K
Leader Size
7 inch
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹
Power Dissipation ²
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RθJA
TJ, TSTG
Rating
-20
±12
-0.66
-2.64
150
833
150, -55~150
Unit
V
V
A
A
mW
°C/ W
°C
http://www.SeCoSGmbH.com/
15-Apr-2016 Rev. A
Any changes of specification will not be informed individually.
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