SSH50N10_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSH50N10
54 A, 100 V, R_DS(ON) 22 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSH50N10 uses advanced trench technology to
provide excellent on-resistance extremely efficient and
cost-effectiveness device. The through-hole version
is available for low-profile applications and suited for low
voltage applications such as DC/DC converters.
FEATURES
High Density Cell Design for Ultra Low On-Resistance
High power and Current handling capability
Excellent CdV/dt effect decline
100% EAS and 100% Rg Guaranteed
Green Device Available
TO-220
B
N
D
E
MA
O
P
H
JC
K
G
L
L
F
PACKAGE CODE
D
50N10
= Marking
G DS
N-Channel
D
G
S
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
14.22 16.51
9.65 10.67
12.50 14.75
3.56 4.90
0.51 1.45
2.03 2.92
0.31 0.76
3.5
4.5
REF.
J
K
L
M
N
O
P
Millimeter
Min. Max.
0.7
1.78
0.38 1.02
2.39 2.69
2.50 3.43
3.10 4.09
8.38 9.65
0.89 1.47
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V¹
TC=25°C
ID
TC=100°C
Pulsed Drain Current²
IDM
Total Power Dissipation⁴
TC=25°C
PD
TA=25°C
Single Pulse Avalanche Energy³
EAS
Single Pulse Avalanche Current
IAS
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-case¹
Max.
RθJC
Thermal Resistance Junction-ambient(PCB mount)¹
Max.
RθJA
Ratings
100
±20
54
38
120
104
3.13
98
41
-55 ~ +150
1.2
40
Unit
V
V
A
A
A
W
W
mJ
A
°C
°C/W
°C/W
http://www.SeCoSGmbH.com/
19-Jun-2014 Rev. A
Any changes of specification will not be informed individually.
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