SSG9971A Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG9971A
5A, 60V, R_DS(ON) 36mΩ
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG9971A is the highest performance trench
dual N-ch MOSFETs with extreme high cell density,
which provide excellent R_DSON and gate charge for
most of the synchronous buck converter applications .
The SSG9971A meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
MARKING CODE
9971ASS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.79 6.20
4.70 5.11
3.80 4.00
0°
8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.3 1.752
0 0.25
0.25 REF.
S
D
G
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹@ VGS=10V
TA=25°C
ID
TA=70°C
Pulsed Drain Current ³
IDM
Power Dissipation@ TA=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance Junction-Ambient ¹
RθJA
Thermal Resistance Junction-Ambient ²
RθJA
Thermal Resistance Junction-Case ¹
RΘjc
Rating
60
±20
5
4
14
1.5
-55~150
85
135
50
Unit
V
V
A
A
W
°C
°C/W
°C/W
°C/W
http://www.SeCoSGmbH.com/
02-Jun-2017 Rev. B
Any changes of specification will not be informed individually.
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