SSG9926J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG9926J
4.8A, 20V, R_DS(ON) 30mΩ
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG9926J provides the designers with the best
combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
SOP-8
B
FEATURES
Advanced trench processing technology
High density cell design for ultra low on-resistance
High power and current handing capability
MARKING
Q9926
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
G
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
ID
Pulsed Drain Current
IDM
Power Dissipation ¹
PD
Thermal Resistance from Junction to Ambient ¹
RθJA
Junction and Storage Temperature Range
Notes:
1. The surface of the device is mounted on a 1’’ × 1’’ FR4 board.
TJ, TSTG
Rating
20
±12
4.8
30
1.25
100
150, -55~150
Unit
V
V
A
A
W
°C / W
°C
http://www.SeCoSGmbH.com/
10-Feb-2016 Rev. B
Any changes of specification will not be informed individually.
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