SSG9922E Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSG9922E
6.8A, 20V,RDS(ON) 20m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Description
The SSG9922E provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Features
* Optimal DC/DC Battery Application
* Low On-Resistance
* Capable Of 2.5V Gate Drive
D1 D1 D2 D2
8 765
SOP-8
0.40
0.90
6.20
5.80
0.25
0.19
0.25
o
45 _{0.375 REF}
3.80
4.00
0.35
1.27Typ.
0.49
4.80
0.100.25
5.00
1.35
o
0
1.75
o
8
Dimensions in millimeters
D1
D2
9922ESS
G1
Date Code
G2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,³ VG S@4.5V
Continuous Drain Current,³VG S@4.5V
Pulsed Drain Current ¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
12
S1 G1
34
S2 G2
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
S1
Ratings
20
±12
6.8
5.4
25
2
0.016
-55~+150
S2
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient ³
Max.
Symbol
Rthj-a
Ratings
62.5
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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