SSG9904_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG9904
7.2A, 40V, R_DS(ON) 26mΩ
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG9904 provide the designer with the best
Combination of fast switching, ruggedized device design,
Ultra low on-resistance and cost-effectiveness.
SOP-8
B
FEATURES
Low on-resistance
Simple Drive Requirement
Double-N MosFET Package
MARKING CODE
9904SS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13’ inch
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
G
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
40
Gate-Source Voltage
VGS
±20
Continuous Drain Current@ VGS =10V ¹
Pulsed Drain Current ²
Single Pulse Avalanche Energy ³
TA = 25°C
TA = 70°C
ID
IDM
EAS
7.2
5.6
14.5
28
Avalanche Current
Power Dissipation@ TC=25°C ⁴
IAS
17.8
PD
2.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Ratings
Thermal Resistance Junction-ambient (Max.) ¹
Thermal Resistance Junction-Case (Max.) ¹
RθJA
85
RθJC
50
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
25-Apr-2014 Rev. A
Any changes of specification will not be informed individually.
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