SSG9575_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSG9575
-4A, -60V,RDS(ON) 90m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSG9575 provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Low on-resistance
* Simple drive requirement
* Fast switching characteristic
DDDD
8 765
Date Code
9575SC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ³
Continuous Drain Current ³
Pulsed Drain Current ¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
123 4
SS SG
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
SOP-8
0.40
0.90
6.20
5.80
0.25
0.19
0.25
o
45 _{0.375 REF}
3.80
4.00
0.35
1.27Typ.
0.49
4.80
0.100.25
5.00
1.35
o
0
1.75
o
8
Dimensions in millimeters
D
G
Ratings
-60
±25
-4
-3.2
-20
3
0.02
-55~+150
S
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Ratings
50
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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