SSG9435J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG9435J
-5.1A, -30V, R_DS(ON) 60 mΩ
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize High Cell Density process. Low R_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry.
FEATURES
Low R_DS(on) provides higher efficiency and
extends battery life
Miniature SOP-8 Surface Mount Package Saves Board Space
High power and current handling capability
Extended VGS range for battery pack applications
APPLICATION
PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
MARKING
Q9435
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulsed Avalanche Energy ¹
EAS
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Lead Temperature for Soldering Purposes@1/8’’ from
case for 10s
TL
Operating Junction and Storage Temperature Range
Notes:
1. VDD= -50V,L=0.5mH, RG=25Ω, Starting TJ=25°C.
TJ, TSTG
Rating
-30
±20
-5.1
-20
20
1.4
89
260
150, -55 ~ 150
Unit
V
V
A
A
mJ
W
°C / W
°C
°C
http://www.SeCoSGmbH.com/
10-Feb-2017 Rev. C
Any changes of specification will not be informed individually.
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