SSG7328J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Dual-P Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG7328J
-8 A, -30 V, R_DS(ON) 21 mΩ
Dual-P Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG7328J uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltages as low as 2.5V. The device is
suitable for use as a load switch or in PWM applications.
It may be used in a common drain arrangement to a
bidirectional blocking switch.
FEATURES
Simple Drive Requirement
Lower On-resistance
Low Gate Charge
PACKAGE INFORMATION
Package
SOP-8
MPQ
4K
Leader Size
13’’
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S1
D1
G1
D1
S2
D2
G2
D2
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current ¹
IDM
Power Dissipation ²
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient ²
RθJA
Ratings
-30
±20
-8
-32
1.4
150, -55 ~ 150
89
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
10-Feb-2017 Rev. B
Any changes of specification will not be informed individually.
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