SSG6618_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG6618
7.3A, 30V, R_DS(ON) 18mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG6618 provide the designer with the best
Combination of fast switching, ruggedized device design,
Ultra low on-resistance and cost-effectiveness.
SOP-8
B
FEATURES
Low on-resistance
Simple Drive Requirement
Double-N MosFET Package
MARKING CODE
6618SC
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13’ inch
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current ¹
TA = 25°C
7.3
ID
TA = 70°C
5.8
Pulsed Drain Current ²
IDM
37
Single Pulse Avalanche Energy ³
EAS
72
Avalanche Current
Power Dissipation ⁴
Maximum Junction to Ambient ¹
IAS
21
PD
1.5
RθJA
85
Operating Junction & Storage Temperature Range
TJ, TSTG
-55~150
Unit
V
V
A
A
mJ
A
W
°C / W
°C
http://www.SeCoSGmbH.com/
20-Feb-2013 Rev. A
Any changes of specification will not be informed individually.
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