SSG5509A Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG5509A
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R_DS(ON) 30 mΩ
P-Ch: -4.8 A, -30 V, R_DS(ON) 55 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG5509A uses advanced trench technology to
provide excellent on-resistance extremely efficient and
cost-effectiveness device. The SOP-8 package is universally
preferred for all commercial-industrial surface mount
applications and suited for low voltage applications such as
DC/DC converters.
FEATURES
Lower Gate Charge
RoHS Compliant
MARKING CODE
5509ASS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
N-Ch
P-Ch
Drain-Source Voltage
VDS
30
-30
Gate-Source Voltage
VGS
±12
±12
Continuous Drain Current³
TA=25℃
ID
6.1
-4.8
TA=70℃
4.9
-3.8
Pulsed Drain Current¹
IDM
30
-30
Total Power Dissipation
PD
2
Operating Junction and Storage Temperature Range
Linear Derating Factor
TJ, TSTG
-55~150
0.016
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-ambient ³
RθJA
62.5
Unit
V
V
A
A
A
W
°C
W / °C
°C / W
http://www.SeCoSGmbH.com/
27-Jun-2011 Rev. A
Any changes of specification will not be informed individually.
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