SSG4953_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-P Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4953
-6 A, -30 V, R_DS(ON) 45 m
Dual-P Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4953 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltages as low as 2.5V. The device is
suitable for use as a load switch or in PWM applications.
It may be used in a common drain arrangement to from a
bidirectional blocking switch.
FEATURES
 Simple Drive Requirement
 Lower On-resistance
 Low Gate Charge
MARKING
4953SS


 = Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13’ inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S1
D1
G1
D1
S2
D2
G2
D2
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
V_DS
V_GS
Continuous Drain Current @ V_GS=10V ¹
Pulsed Drain Current ²
Single Pulse Avalanche Energy ³
T_A = 25°C
T_A = 100°C
I_D
I_DM
EAS
Avalanche Current
Total Power Dissipation ⁴
I_AS
T_A = 25°C
P_D
Operating Junction & Storage Temperature Range
T_J, T_STG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient ¹ (Max.)
R_θJA
Thermal Resistance Junction-Case ¹ (Max.)
R_θJC
Ratings
-30
±20
-6
-4
-12
108
19
1.5
-55 ~ 150
83
60
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
21-Jul-2014 Rev. F
Any changes of specification will not be informed individually.
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