SSG4953 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSG4953
-5A, -30V,RDS(ON) 53m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOP-8
Description
The SSG4953 provide the designer with the best Combination of fast switching,
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Low on-resistance
* Simple drive requirement
* Fast switching Characteristic
D1 D1 D2 D2
8
7
6
5
Date Code
4953SS
0.40
0.90
6.20
5.80
0.25
0.19
0.25
o
45 _{0.375 REF}
3.80
4.00
0.35
1.27Typ.
0.100.25
0.49
4.80
5.00
o
1.35
0
1.75
o
8
Dimensions in millimeters
D1
D2
G1
G2
1
2
3
4
S1 G1 S2 G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current ¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25^oC
ID@TA=70^oC
IDM
PD@TA=25^oC
Tj, Tstg
Ratings
-30
±20
-5
-4
-20
2
0.016
-55~+150
Unit
V
V
A
A
A
W
W /^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ (Max)
Symbol
Rthj-a
Ratings
62.5
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
23-Jun-2010 Rev. D
Any changing of specification will not be informed individual
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