SSG4935P Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4935P
P-Ch Enhancement Mode Power MOSFET
-7.8 A, -30 V, R_DS(ON) 21 m
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize high cell density process. Low R_DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical applications
are PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Miniature SOP-8 surface mount package saves board space.
 High power and current handling capability..
 Extended V_GS range (±25) for battery pack applications.
PRODUCT SUMMARY
V_DS(V)
-30
PRODUCT SUMMARY
R_DS(on) (m
21@V_GS= -10V
35@V_GS= -4.5V
I_D(A)
-7.8
-6.0
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
G
D
S
D
G
D
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Total Power Dissipation ^a
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
I_S
P_D @ T_A = 25°C
P_D @ T_A = 70°C
T_J, T_STG
-30
±25
-7.8
-6.2
±30
-1.7
2.0
1.3
-55 ~ 150
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-ambient (Max.) ^{a t≦10 sec}
Steady State
R_θJA
62.5
110
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
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