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SSG4920N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual N-Channel Mode Power MOSFET
Elektronische Bauelemente
SSG4920N
6.9 A, 30 V, RDS(ON) 34 m
Dual N-Channel Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process
Low RDS(on) assures minimal power loss and conserves energy, making
this device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and battery-
powered products such as computers, printers, battery charger,
telecommunication power system, and telephones power system.
FEATURES
 Low RDS(on) provides higher efficiency and extends battery life.
 Miniature SOP-8 surface mount package saves board space.
 High power and current handling capability.
 Low side high current DC-DC Converter applications.
PRODUCT SUMMARY
VDS(V)
30
SSG4920N
RDS(on) m(
34@VGS=10V
41@VGS=4.5V
ID(A)
6.9
6.0
SOP-8
B
A
H
G
LD
M
C
N
JK
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
S
D
G
D
S
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
Operating Junction & Storage Temperature Range
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
30
±20
±6.9
±5.6
±40
1.7
2.1
1.3
-55 ~ 150
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-Ambient (Max.) 1
t ≦ 10 sec
Steady State
RθJA
62.5
110
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
22-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
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