SSG4913 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4913
P-Ch Enhancement Mode Power MOSFET
-3.5 A, -20 V, R_DS(ON) 130 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS & FEATURES
z The SSG4913 provide the designer with the
best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
z The SOP-8 package is universally preferred
for all commercial-industrial surface mount applications
and suited for low voltage applications
such as DC/DC converters.
z Simple Drive Requirement
z Lower On-resistance
z Fast Switching Performance
PACKAGE INFORMATION
Weight: 0.07936g
MARKING CODE
D1 D1 D2 D2
4913SS
1
S1 G1 S2 G2
= Date Code
2
Gate1
Drain1
78
4
Gate2
1
Source1
Drain2
56
3
Source2
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Operating Junction and Storage Temperature Range
Linear Derating Factor
V_DS
V_GS
I_D @T_A=25℃
I_D @T_A=70℃
I_DM
P_D @T_A=25℃
T_J, T_STG
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient³ Max
Symbol
R_θJ-AMB
Ratings
-20
±8
-3.5
-2.8
-18
2
-55 ~ +150
0.02
Value
62.5
Unit
V
V
A
A
A
W
℃
W/℃
Unit
℃/W
01-December-2008 Rev. A
Page 1 of 4