SSG4910N_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4910N
10A , 30V , R_DS(ON) 13.5 m
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Low thermal impedance copper leadframe SOP-8
saves board space.
 Fast switching speed.
 High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
G
D
S
D
G
D
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
T_A=25°C
T_A=70°C
Continuous Source Current (Diode Conduction) ¹
Total Power Dissipation ¹
T_A=25°C
T_A=70°C
Operating Junction & Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_D
I_DM
I_S
P_D
P_D
T_J, T_STG
THERMAL RESISTANCE RATINGS
Maximum Junction to Case ¹
t≦5 sec
R_θJC
Maximum Junction to Ambient ¹
t≦5 sec
R_θJA
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings
30
±20
10
8.2
50
2.3
2.1
1.3
-55~150
40
60
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
24-Oct-2011 Rev. B
Any changes of specification will not be informed individually.
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