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SSG4902N Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual N-Channel Mode Power MOSFET
Elektronische Bauelemente
SSG4902N
6.4 A, 60 V, RDS(ON) 35 m
Dual N-Channel Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density process
to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable
and battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
FEATURES
 Low RDS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SOP-8 saves board space.
 Fast switching speed.
 High performance trench technology.
PRODUCT SUMMARY
VDS(V)
60
SSG4902N
RDS(on) (m
35@VGS=10V
45@VGS=4.5V
ID(A)
±6.4
±5.6
SOP-8
B
A
H
G
LD
M
C
N
JK
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
S
D
G
D
S
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
Operating Junction & Storage Temperature Range
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-Ambient (Max.) 1
t ≦ 10 sec
Steady State
RθJA
RATINGS
60
±20
±6.4
±5.2
±40
2
2.1
1.3
-55 ~ 150
62.5
110
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
26-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
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