SSG4842N Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 23A , 40V , RDS(ON) 9 m
N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4842N
23A , 40V , R_DS(ON) 9 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R_DS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low R_DS(on) Provides Higher Efficiency And Extends
Battery Life.
Low Thermal Impedance Copper Leadframe
SOIC-8 Saves Board Space
Fast Switching Speed
High Performance Trench Technology
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA = 25°C
ID
TA = 70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Total Power Dissipation¹
TA = 25°C
PD
TA = 70°C
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
t ≦ 10 sec
Thermal Resistance Junction-Ambient (Max.) ¹
RθJA
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
40
20
23
19
60
2.9
3.1
2.2
-55~150
40
80
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
13-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
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