SSG4822J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4822J
8.5A, 30V, R_DS(ON) 16mΩ
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4822J provide the designer with the best
Combination of fast switching, ruggedized device design,
Ultra low on-resistance and cost-effectiveness.
FEATURES
Low on-resistance
Simple Drive Requirement
Double-N MosFET Package
SOP-8
LD
M
AC
J^K
H
G
B
FE
MARKING
Q4822
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
Dimensions in millimeters
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.700 5.10
3.80 4.00
0°
8°
0.40 1.27
0.17 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
S
D
G
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@t≦10s ¹
ID
Pulsed Drain Current ²
IDM
Power Dissipation
PD
Maximum Junction to Ambient@t≦10s ¹
RθJA
Operating Junction & Storage Temperature Range
TJ, TSTG
Ratings
30
±20
8.5
30
1.4
89
150, -55~150
Unit
V
V
A
A
W
°C / W
°C
http://www.SeCoSGmbH.com/
10-Feb-2017 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 3