SSG4801 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-P Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4801
-5 A, -30 V, R_DS(ON) 50 m
Dual-P Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4801 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltages as low as 2.5V. The device is
suitable for use as a load switch or in PWM applications.
It may be used in a common drain arrangement to from a
bidirectional blocking switch.
FEATURES
 Simple Drive Requirement
 Lower On-resistance
 Low Gate Charge
MARKING
4801SS


 = Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S1
D1
G1
D1
S2
D2
G2
D2
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current ¹
Pulsed Drain Current ²
Total Power Dissipation ¹
Linear Derating Factor
T_A = 25°C
T_A = 70°C
T_A = 25°C
Symbol
V_DS
V_GS
I_D
I_DM
P_D
Operating Junction & Storage Temperature Range
T_J, T_STG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient ¹ (Max.)
R_θJA
Notes：
1. Surface Mounted on FR4 Board, t ≦ 10sec.
2. Pulse width ≦ 300 μs, duty cycle ≦ 2%
Ratings
-30
±12
-5
-4.2
-30
2
0.016
-55 ~ 150
62.5
Unit
V
V
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
19-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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