SSG4639STM Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
FEATURES
 Super high dense cell design for low R_DS(on).
 Rugged and reliable.
 Surface Mount Package.
 ESD Protected.
PRODUCT SUMMARY
V_DSS(V)
-30
PRODUCT SUMMARY
R_DS(on) m(
8.5@V_GS= -10V
13@V_GS= -4.5V
I_D(A)
-14
MARKING
DD D D
876 5
STM4639


123 4
SS SG
 = Date Code
SSG4639STM
P-Ch Enhancement Mode Power MOSFET
-14 A, -30 V, R_DS(ON) 8.5 m
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^a
Pulsed Drain Current ^b
Single Pulse Avalanche Energy ^d
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
E_AS
Maximum Power Dissipation ^a
P_D @ T_A = 25°C
P_D @ T_A = 70°C
Operating Junction & Storage Temperature Range
T_J, T_STG
Thermal Resistance Junction-ambient ^a
THERMAL RESISTANCE RATINGS
R_θJA
RATINGS
-30
±20
-14
-11.2
-79
180
2.5
1.6
-55 ~ 150
50
UNIT
V
V
A
A
A
mJ
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
13-May-2010 Rev. B
Any changes of specification will not be informed individually.
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