SSG4530C_15 Datasheet, PDF (1/6 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4530C
N-Ch: 5.3A, 30V, R_DS(ON) 82 mΩ
P-Ch: -5.2A, -30V, R_DS(ON) 80 mΩ
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R_DS(on) and to ensure minimal power loss and heat
dissipation.
FEATURES
Low R_DS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless telephones
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.8 6.20
4.80 5.00
3.80 4.00
0°
8°
0.50 0.93
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.51
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
Top View
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
N-CH
P-CH
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current ¹
TA = 25°C
ID
5.3
-5.2
A
TA = 70°C
4.2
-4.1
A
Pulsed Drain Current ²
IDM
20
-20
A
Continuous Source Current (Diode Conduction) ¹
IS
1.3
-1.3
A
Total Power Dissipation ¹
TA = 25°C
PD
TA = 70°C
2.1
W
1.3
W
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Ratings
Maximum Junction-to-Ambient ¹
t≦10 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
30-Jul-2012 Rev. A
RθJA
62.5
°C / W
110
°C / W
Any changes of specification will not be informed individually.
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