SSG4520H_12 Datasheet, PDF (1/6 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4520H
N-Ch: 6.6A, 20V, R_DS(ON) 47 m
P-Ch: -5.2A, -20V, R_DS(ON) 79 m
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R_DS(on) and to ensure minimal power loss and heat
dissipation.
FEATURES
 Low R_DS(on) provides higher efficiency and
extends battery life.
 Low thermal impedance copper leadframe
SOP-8 saves board space
 Fast switching speed
 High performance trench technology
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless telephones
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.8 6.20
4.80 5.00
3.80 4.00
0°
8°
0.50 0.93
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.51
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
Top View
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
N-CH
P-CH
Unit
Drain-Source Voltage
V_DS
20
-20
V
Gate-Source Voltage
V_GS
±8
±8
V
Continuous Drain Current ¹
T_A = 25°C
I_D
T_A = 70°C
Pulsed Drain Current ²
I_DM
6.6
-5.2
A
5
-3.8
A
20
-20
A
Continuous Source Current (Diode Conduction) ¹
I_S
2.2
-2.2
A
Total Power Dissipation ¹
T_A = 25°C
P_D
T_A = 70°C
2.1
W
1.3
W
Operating Junction & Storage Temperature Range
T_J, T_STG
-55 ~ 150
°C
Thermal Resistance Ratings
Maximum Junction-to-Ambient ¹
t≦10 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
62.5
°C / W
110
°C / W
http://www.SeCoSGmbH.com/
10-Jan-2012 Rev. D
Any changes of specification will not be informed individually.
Page 1 of 6