SSG4520H Datasheet, PDF (1/6 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4520H
N-Ch: 6.6 A, 20 V, R_DS(ON) 47 m
P-Ch: -5.2 A, -20 V, R_DS(ON) 79 m
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless
telephones
FEATURES
 Low R_DS(on) provides higher efficiency and
extends battery life.
 Low thermal impedance copper leadframe
SOP-8 saves board space
 Fast switching speed
 High performance trench technology
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.8 6.20
4.80 5.00
3.80 4.00
0°
8°
0.50 0.93
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.51
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Total Power Dissipation ¹
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
I_S
P_D @ T_A = 25°C
P_D @ T_A = 70°C
T_J, T_STG
Thermal Resistance Ratings
Maximum Junction-to-Ambient ¹
t≦ 10 sec
Steady State
R_θJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
N-CH P-CH
20
-20
±8
±8
6.6
-5.2
5.5
-4.2
20
-20
1.3
-1.3
3.1
3.1
1.3
1.3
-55 ~ 150
40
110
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
27-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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