SSG4512CE Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m
P-Ch: -5.2 A, -30 V, RDS(ON) 52 m

Elektronische Bauelemente
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R_DS(ON) 31 mΩ
P-Ch: -5.2 A, -30 V, R_DS(ON) 52 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R_DS(on)
and to ensure minimal power loss and heat dissipation.
SOP-8
B
FEATURES
Low R_DS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast Switch Speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
S1
D1
G1
D1
S2
D2
G2
D2
MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
N-Ch
P-Ch
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current¹
TA=25°C
ID
6.9
-5.2
A
TA=70°C
5.4
-6.8
A
Pulsed Drain Current²
IDM
20
-20
A
Continuous Source Current (Diode Conduction) ¹
IS
1.3
-1.3
A
Total Power Dissipation¹
TA=25°C
PD
2.1
2.1
W
TA=70°C
1.3
1.3
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
°C
Maximum Junction-ambient ¹
Thermal Resistance Ratings
t<=5 sec
RθJA
60
°C / W
Maximum Junction-Case ¹
t<=5 sec
Notes：
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature
http://www.SeCoSGmbH.com/
26-Dec-2011 Rev. A
RθJC
40
°C / W
Any changes of specification will not be informed individually.
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