SSG4504 Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4504
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 7.2 A, 40 V, R_DS(ON) 30 mΩ
P-Ch: -6.5A, -40 V, R_DS(ON) 40 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4504 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell density,
which provide excellent R_DSON and gate charge for most
of the synchronous buck converter applications.
The SSG4504 meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
MARKING
4504SS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.79 6.20
4.70 5.11
3.80 4.00
0°
8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.3 1.752
0 0.25
0.25 REF.
S1
D1
G1
D1
S2
D2
G2
D2
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹, VGS@10V ^TA=25°C
ID
TA=100°C
Pulsed Drain Current ³
IDM
Total Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Data
Thermal Resistance Junction-ambient ¹
RθJA
Thermal Resistance Junction-ambient ²
RθJA
Thermal Resistance Junction-case ¹
RθJC
Ratings
N-Ch
P-Ch
40
-40
±20
±20
7.2
-6.5
5.6
-5.1
14.5
-13
2.5
-55~150
85
135
50
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
28-Aug-2017 Rev. B
Any changes of specification will not be informed individually.
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