SSG4503J Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4503J
N-Ch: 6.9A, 30V, R_DS(ON) 28 mΩ
P-Ch: -6.3A, -30V, R_DS(ON) 36 mΩ
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Advanced Power MOSFETs provide the designers with
the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
SOP-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
SOP-8
B
LD
M
FEATURES
Low R_DS(on) Provides Higher Efficiency and
Longer Battery Life
Low Thermal Impedance Copper Lead Frame
Fast Switching Speed
High Performance Trench Technology
MARKING
Q4503
Date Code
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.70 5.10
3.80 4.00
0°
8°
0.40 1.27
0.17 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
N-CH
Rating
P-CH
Drain-Source Voltage
VDS
30
-30
Gate-Source Voltage
VGS
±20
Continuous Drain Current ¹
TA =25°C
6.9
ID
-6.3
TA =70°C
5.5
-5
Pulsed Drain Current ²
IDM
20
-20
Total Power Dissipation
Operating Junction and Storage Temperature Range
PD
TJ, TSTG
1.4
150, -55~150
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
RθJA
89
Unit
V
V
A
A
A
W
°C
°C/ W
http://www.SeCoSGmbH.com/
10-Feb-2017 Rev. B
Any changes of specification will not be informed individually.
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