SSG4502CE Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m
P-Ch: -8.5A, -30 V, RDS(ON) 23 m

Elektronische Bauelemente
SSG4502CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 10.0 A, 30 V, R_DS(ON) 16 mΩ
P-Ch: -8.5A, -30 V, R_DS(ON) 23 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R_DS(on)
and to ensure minimal power loss and heat dissipation.
SOP-8
B
FEATURES
Low R_DS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast Switch Speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S1
D1
G1
D1
S2
D2
G2
D2
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
N-Ch
P-Ch
Drain-Source Voltage
VDS
30
-30
Gate-Source Voltage
VGS
20
-25
Continuous Drain Current¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
10
-8.5
8.1
-6.8
50
-50
2.3
-2.1
Total Power Dissipation¹
TA=25°C
PD
TA=70°C
2.1
2.1
1.3
1.3
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Ratings
Maximum Junction-Ambient ¹
t<=10sec
Steady State
Notes：
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature
RθJA
62.5
110
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
26-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
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