SSG4502C Datasheet, PDF (1/6 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4502C
N-Ch: 10 A, 30 V, R_DS(ON) 16 m
P-Ch: -8.5 A, -30 V, R_DS(ON) 23 m
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless
telephones
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SOP-8 saves board space
 Fast switching speed
 High performance trench technology
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.8 6.20
4.80 5.00
3.80 4.00
0°
8°
0.50 0.93
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.51
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
G
S
G
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
N- Ch P- Ch
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Total Power Dissipation ¹
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
I_S
P_D @ T_A = 25°C
P_D @ T_A = 70°C
T_J, T_STG
30
-30
20
-20
10
-8.5
8.1
-6.8
±50
±50
2.3
-2.1
2.1
2.1
1.3
1.3
-55 ~ 150
Maximum Junction-to-Ambient ¹
Thermal Resistance Ratings
t≦ 10 sec
Steady State
R_θJA
62.5
110
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
D
D
D
D
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
27-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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