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SSG4490N Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4490N
5.2 A, 100 V, RDS(ON) 78 mïï
N-Ch Enhancement Mode Power MOSFET
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management In portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
ï¬ Low RDS(on) provides higher efficiency and
extends battery life.
ï¬ Low thermal impedance copper leadframe
SOIC-8 saves board space.
ï¬ Fast switching speed.
ï¬ High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13â inch
SOP-8
B
A
H
G
LD
M
C
N
JK
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
Operating Junction & Storage Temperature Range
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.) 1 tâ¦5 sec
RθJC
Thermal Resistance Junction-ambient (Max.) 1 tâ¦5 sec
RθJA
Notes
1. Surface Mounted on 1â x 1â FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
100
±20
5.2
3.9
50
2.3
3.1
2.2
-55 ~ 150
25
50
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
17-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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