SSG4480N_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4480N
7.1 A, 80 V, R_DS(ON) 41 m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low R_DS(on) trench technology.
 Low thermal impedance.
 Fast switching speed.
APPLICATIONS
 White LED boost converters
 Automotive Systems
 Industrial DC/DC Conversion Circuits
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Total Power Dissipation ¹
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
I_S
P_D @ T_A = 25°C
P_D @ T_A = 70°C
T_J, T_STG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient (Max.) ^{1 t≦10 sec}
Steady State
R_θJA
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
S
S
S
G
Ratings
80
±20
7.1
6
50
3.8
3.1
2.2
-55 ~ 150
40
80
D
D
D
D
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
17-Dec-2010 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 4