SSG4463P_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4463P
P-Ch Enhancement Mode Power MOSFET
-13.4A, -20V, R_DS(ON) 11.5 m
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize high cell density process. Low R_DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Miniature SOP-8 surface mount package saves
board space.
 High power and current handling capability.
APPLICATION
PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13’ inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
T_A = 25°C
T_A = 70°C
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Total Power Dissipation ¹
T_A = 25°C
T_A = 70°C
Operating Junction & Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
Thermal Resistance Rating
Thermal Resistance Junction-Case (Max.) ¹
t ≦ 5 sec
R_θJC
Thermal Resistance Junction-Ambient (Max.) ¹ t ≦ 5 sec
R_θJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
-20
±12
-13.4
-8.4
±50
-2.1
3.1
2.0
-55 ~ 150
25
40
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
01-May-2011 Rev. C
Any changes of specification will not be informed individually.
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