SSG4462N_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4462N
9.7 A, 60 V, R_DS(ON) 22 m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SOP-8 saves board space.
 Fast switching speed.
 High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size S
13’ inch
S
S
G
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J
0.375 REF.
C 3.80 4.00 K
45°
D
0°
8°
L 1.35 1.75
D
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N
0.25 REF.
G
1.27 TYP.
D
D
D
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
T_A = 25°C
T_A = 70°C
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Total Power Dissipation ¹
T_A = 25°C
T_A = 70°C
Operating Junction & Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_D
I_DM
I_S
P_D
P_D
T_J, T_STG
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient ¹
t ≦ 10 sec
Steady State
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
R_θJA
Ratings
60
±20
9.7
8
50
4.1
3.1
2.2
-55 ~ 150
40
80
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
20-Nov-2013 Rev. B
Any changes of specification will not be informed individually.
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