SSG4459J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4459J
-6.5A, -30V, R_DS(ON) 46 mΩ
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG4459J combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load
switch and battery protection applications.
SOP-8
B
APPLICATIONS
Battery switch
Load switch
MARKING
Q4459
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.700 5.10
3.80 4.00
0°
8°
0.40 1.27
0.17 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy ¹
Power Dissipation
Thermal Resistance from Junction to Ambient
Lead Temperature for Soldering Purposes@1/8’’ from case for 10s
Junction and Storage Temperature Range
Notes:
1. Test condition: VDD= -50V, L=0.1mH, RG=25Ω, Starting TJ=25°C.
Symbol
VDS
VGS
ID
IDM
EAS
PD
RθJA
TL
TJ, TSTG
Rating
-30
±20
-6.5
-26
14
1.4
89
260
150, -55~150
Unit
V
V
A
A
mJ
W
°C / W
°C
°C
http://www.SeCoSGmbH.com/
10-Feb-2017 Rev. B
Any changes of specification will not be informed individually.
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