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SSG4438J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
SSG4438J
8.2A, 60V, RDS(ON) 22mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4438J provides the designer with the best
combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
SOP-8
LD
M
FEATURES
Low on-resistance
Simple Drive Requirement
MARKING
Q4438
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
AC
JK
H
G
B
FE
Dimensions in millimeters
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.700 5.10
3.80 4.00
0°
8°
0.40 1.27
0.17 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.35 1.75
0.10 0.25
0.25 REF.
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Power Dissipation
Maximum Junction to Ambient 1
VDS
VGS
ID
IDM
PD
RθJA
60
±20
8.2
40
1.25
100
V
V
A
A
W
°C / W
Operating Junction & Storage Temperature Range
TJ, TSTG
150, -55~150
°C
Notes:
1.
2.
The value of RΘJA is measured with the device mounted on a 1 inch2 FR-4 board with 2OZ copper, in a still air environment with
TA=25℃. The value in any given application depends on the user’s specific board design. The current rating is based on the t≦10s
thermal resistance rating.
Repetitive rating: Pulse width limited by junction temperature.
http://www.SeCoSGmbH.com/
10-Feb-2017 Rev. B
Any changes of specification will not be informed individually.
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