SSG4435_11 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4435
-8A, -30V, R_DS(ON) 20m
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4435 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOP-8 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
 Low on-resistance
 Simple Drive Requirement
 Fast switching
MARKING
4435SC


 = Date Code
SOP-8
B
LD
M
A
H
G
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
LeaderSize
13’ inch
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
V_DS
Ratings
-30
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ³
Pulsed Drain Current ^1.2
T_A = 25°C
I_D
-8
T_A = 70°C
-6
I_DM
-50
Power Dissipation
Maximum Junction to Ambient ³
P_D
2.5
R_θJA
50
Linear Derating Factor
0.02
Operating Junction & Storage Temperature Range
T_J, T_STG
-55~150
Unit
V
V
A
A
W
°C / W
W / °C
°C
http://www.SeCoSGmbH.com/
01-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
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